Infineon Technologies - F4-200R06KL4

F4-200R06KL4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F4-200R06KL4
Description N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 225 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet F4-200R06KL4 Datasheet
In Stock47
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 225 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 330 ns
No. of Terminals: 26
Maximum Power Dissipation (Abs): 695 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 230 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X26
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.55 V
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