Infineon Technologies - F4-45MR12W1M1_B76

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F4-45MR12W1M1_B76 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F4-45MR12W1M1_B76
Description N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Form: UNSPECIFIED; JESD-30 Code: R-XUFM-X15;
Datasheet F4-45MR12W1M1_B76 Datasheet
In Stock155
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 14 pF
Maximum Drain Current (ID): 25 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 15
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X15
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
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