FB10R06VE3BOMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FB10R06VE3BOMA1
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Maximum Collector-Emitter Voltage: 600 V; Package Body Material: UNSPECIFIED;
Datasheet	FB10R06VE3BOMA1 Datasheet
In Stock	665

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	16 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
Transistor Element Material:	SILICON
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	280 ns
No. of Terminals:	15
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	40 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-W15
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
665	-	-

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