Infineon Technologies - FB20R06KL4B1

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FB20R06KL4B1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FB20R06KL4B1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 78 W; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Maximum VCEsat: 2.55 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FB20R06KL4B1 Datasheet
In Stock71
NAME DESCRIPTION
Maximum Collector Current (IC): 25 A
Maximum Power Dissipation (Abs): 78 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.55 V
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