Infineon Technologies - FD1000R17IE4DB2BOSA1

  1. Home
  2. Infineon Technologies - FD1000R17IE4DB2BOSA1
FD1000R17IE4DB2BOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FD1000R17IE4DB2BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FD1000R17IE4DB2BOSA1 Datasheet
In Stock1,994
NAME DESCRIPTION
Other Names: 2156-FD1000R17IE4DB2BOSA1
FD1000R17IE4D_B2
SP000823690
INFINFFD1000R17IE4DB2BOSA1
Maximum Collector Current (IC): 1390 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1910 ns
Maximum Power Dissipation (Abs): 6250 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 830 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.45 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,994 - -

Popular Products

Category Top Products

IRGP50B60PD1PBF by Infineon Technologies

IRGP50B60PD1PBF

Infineon Technologies

IRGP50B60PD1PBF by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and current of 75A. It has a power dissipation of 390W, rise time of 20ns, and fall time of 20ns. Ideal for power control applications due to its fast switching speed and high collector-emitter voltage capability.
FS100R12KT4GBOSA1 by Infineon Technologies

FS100R12KT4GBOSA1

Infineon Technologies

FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.
FS400R07A3E3BOMA1 by Infineon Technologies

FS400R07A3E3BOMA1

Infineon Technologies

FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).
IRG4PH30KDPBF by International Rectifier

IRG4PH30KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 20 A; No. of Elements: 1;
FGAF40N60SMD by Fairchild Semiconductor

FGAF40N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 20 V;
STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
APT100GN60B2G by Microsemi

APT100GN60B2G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Case Connection: COLLECTOR;
APT200GN60JDQ4 by Microchip Technology

APT200GN60JDQ4

Microchip Technology

Microchip Technology's APT200GN60JDQ4 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 283A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 660ns turn off time, and 130ns turn on time. Package style is flange mount with plastic/epoxy body material.
APT65GP60JDQ2 by Advanced Power Technology

APT65GP60JDQ2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
CM600DY-24A by Mitsubishi Electric

CM600DY-24A

Mitsubishi Electric

Mitsubishi Electric's CM600DY-24A is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a built-in diode. It has a max VCEsat of 3V and can handle up to 600A collector current. Ideal for power control applications requiring high power dissipation (3670W) and operating temperatures up to 150°C.
FPF1C2P5MF07AM by Onsemi

FPF1C2P5MF07AM

Onsemi

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
FS75R07W2E3B11ABOMA1 by Infineon Technologies

FS75R07W2E3B11ABOMA1

Infineon Technologies

Infineon Technologies' FS75R07W2E3B11ABOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 95A, and max. collector-emitter voltage of 650V. Ideal for power control applications due to its complex configuration and fast turn on/off times (44ns/258ns). Package style: Flange mount with isolated case connection.
IKW40N65ES5XKSA1 by Infineon Technologies

IKW40N65ES5XKSA1

Infineon Technologies

IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
IRG4PC40UDPBF by Infineon Technologies

IRG4PC40UDPBF

Infineon Technologies

IRG4PC40UDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 330ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 160W, suitable for high-power electronic systems.
APTGT75A60T1G by Microsemi

APTGT75A60T1G

Microsemi

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Terminal Finish: TIN SILVER COPPER;
STGP15H60DF by STMicroelectronics

STGP15H60DF

STMicroelectronics

STGP15H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 30A IC, and 115W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 225ns turn-off time, and -55 to 175°C operating temperature range.
IXBX75N170A by Littelfuse

IXBX75N170A

Littelfuse

IXBX75N170A by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 110A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its fast switching times (ton: 66ns, toff: 478ns) and low VCEsat of 6V. Suitable for high-power systems operating in a wide temperature range (-55°C to 150°C).
IGB50N65S5ATMA1 by Infineon Technologies

IGB50N65S5ATMA1

Infineon Technologies

IGB50N65S5ATMA1 by Infineon is an N-CHANNEL IGBT for power control applications. It has a max VCEsat of 1.7V, IC of 80A, and toff of 215ns. With a package style of SMALL OUTLINE and operating temperature range from -40 to 175 °C, it offers efficient power management in various electronic systems.
IKD04N60RFAATMA1 by Infineon Technologies

IKD04N60RFAATMA1

Infineon Technologies

IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
IRGP4066D-EPBF by International Rectifier

IRGP4066D-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;