Infineon Technologies - FD1000R17IE4DB2BOSA1

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FD1000R17IE4DB2BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD1000R17IE4DB2BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FD1000R17IE4DB2BOSA1 Datasheet
In Stock931
NAME DESCRIPTION
Maximum Collector Current (IC): 1390 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1910 ns
Maximum Power Dissipation (Abs): 6250 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 830 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.45 V
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Pricing (USD)

Qty. Unit Price Ext. Price
931 $605.960 $564,148.760

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