Infineon Technologies - FD1200R17KE3-K

FD1200R17KE3-K by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD1200R17KE3-K
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5950 W; Maximum Collector Current (IC): 1600 A; Maximum Operating Temperature: 150 Cel;
Datasheet FD1200R17KE3-K Datasheet
In Stock78
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 1600 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 2100 ns
No. of Terminals: 7
Maximum Power Dissipation (Abs): 5950 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 1050 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1700 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.45 V
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