Infineon Technologies - FD1600/1200R17HP4-K_B2

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FD1600/1200R17HP4-K_B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD1600/1200R17HP4-K_B2
Description N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10500 W; Reference Standard: UL APPROVED; Nominal Turn On Time (ton): 650 ns;
Datasheet FD1600/1200R17HP4-K_B2 Datasheet
In Stock791
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 1710 ns
No. of Terminals: 9
Maximum Power Dissipation (Abs): 10500 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 650 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X9
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1700 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.25 V
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