Infineon Technologies - FD400R17KF6B2

  1. Home
  2. Infineon Technologies - FD400R17KF6B2
FD400R17KF6B2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FD400R17KF6B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 800 A; Maximum VCEsat: 3.2 V; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FD400R17KF6B2 Datasheet
In Stock976
NAME DESCRIPTION
Maximum Collector Current (IC): 800 A
Maximum Power Dissipation (Abs): 3700 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
976 - -

Popular Products

Category Top Products

ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
IRG4BC40WLPBF by Infineon Technologies

IRG4BC40WLPBF

Infineon Technologies

IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.
FGA25N120ANTDTU by Rochester Electronics

FGA25N120ANTDTU

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
2MBI200VA-060-50 by Fujitsu

2MBI200VA-060-50

Fujitsu

Fujitsu's 2MBI200VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. Ideal for MOTOR CONTROL applications, it has a max. Collector-Emitter Voltage of 600V and max. Collector Current of 200A. Features include Nominal Turn Off Time of 600ns and Nominal Turn On Time of 650ns in a RECTANGULAR package style with FLANGE MOUNT.
APT85GR120JD60 by Microsemi

APT85GR120JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
MMIX4G20N250 by IXYS Corporation

MMIX4G20N250

IXYS Corporation

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4;
IRGP50B60PDPBF by Infineon Technologies

IRGP50B60PDPBF

Infineon Technologies

IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
FGAF40N60SMD by Fairchild Semiconductor

FGAF40N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 20 V;
IXXX200N60B3 by Littelfuse

IXXX200N60B3

Littelfuse

Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.
FGD3040G2-F085 by Onsemi

FGD3040G2-F085

Onsemi

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
FS50R07W1E3B11ABOMA1 by Infineon Technologies

FS50R07W1E3B11ABOMA1

Infineon Technologies

Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
6PS18012E4FG35689NWSA1 by Infineon Technologies

6PS18012E4FG35689NWSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MG06100S-BR1MM by Littelfuse

MG06100S-BR1MM

Littelfuse

The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.
IRGP4066D-EPBF by International Rectifier

IRGP4066D-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FGH40T65SPD_F155 by Fairchild Semiconductor

FGH40T65SPD_F155

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
NGTB30N120LWG by Onsemi

NGTB30N120LWG

Onsemi

NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
BSM75GB120DN2 by Siemens

BSM75GB120DN2

Siemens

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
APT85GR120J by Microsemi

APT85GR120J

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Nominal Turn On Time (ton): 113 ns;
APT45GP120J by Microsemi

APT45GP120J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
STGB3NC120HDT4 by STMicroelectronics

STGB3NC120HDT4

STMicroelectronics

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.