FF1000R17IE4DP_B2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF1000R17IE4DP_B2
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Case Connection: ISOLATED; Maximum VCEsat: 2.45 V;
Datasheet	FF1000R17IE4DP_B2 Datasheet
In Stock	681

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	1910 ns
No. of Terminals:	12
Maximum Collector-Emitter Voltage:	1700 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	830 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X12
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.45 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
681	-	-

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