FF1000R17IE4DPB2BOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF1000R17IE4DPB2BOSA1
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1700 V; No. of Elements: 2; Reference Standard: UL APPROVED;
Datasheet	FF1000R17IE4DPB2BOSA1 Datasheet
In Stock	1

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	1910 ns
No. of Terminals:	12
Maximum Collector-Emitter Voltage:	1700 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	830 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X12
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Reference Standard:	UL APPROVED
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	-	-

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