Infineon Technologies - FF150R17ME3GENG

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FF150R17ME3GENG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF150R17ME3GENG
Description N-Channel; Maximum Power Dissipation (Abs): 1050 W; Maximum Collector Current (IC): 240 A; Nominal Turn On Time (ton): 366 ns; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF150R17ME3GENG Datasheet
In Stock918
NAME DESCRIPTION
Maximum Collector Current (IC): 240 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1300 ns
Maximum Power Dissipation (Abs): 1050 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 366 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.45 V
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