Infineon Technologies - FF150R17ME3GENG

  1. Home
  2. Infineon Technologies - FF150R17ME3GENG
FF150R17ME3GENG by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF150R17ME3GENG
Description N-Channel; Maximum Power Dissipation (Abs): 1050 W; Maximum Collector Current (IC): 240 A; Nominal Turn On Time (ton): 366 ns; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF150R17ME3GENG Datasheet
In Stock918
NAME DESCRIPTION
Maximum Collector Current (IC): 240 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1300 ns
Maximum Power Dissipation (Abs): 1050 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 366 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.45 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
918 - -

Popular Products

Category Top Products

FP25R12W2T4 by Infineon Technologies

FP25R12W2T4

Infineon Technologies

FP25R12W2T4 by Infineon Technologies is an N-CHANNEL IGBT transistor with 1200V VCE, 39A IC, and 175W power dissipation. It is used for POWER CONTROL applications due to its 685ns turn-off time and complex configuration. The transistor's silicon material and isolated case connection make it suitable for high-power operations at up to 175°C.
CM450DX-24T by Mitsubishi Electric

CM450DX-24T

Mitsubishi Electric

The Mitsubishi Electric CM450DX-24T is an N-channel IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.05V and can handle up to 450A collector current. Ideal for power control applications with a max power dissipation of 2500W and operating temperature range from -40°C to 150°C.
STGWA50IH65DF by STMicroelectronics

STGWA50IH65DF

STMicroelectronics

STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
IRGB20B60PD1PBF by Infineon Technologies

IRGB20B60PD1PBF

Infineon Technologies

IRGB20B60PD1PBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 215W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast rise time of 8ns. Suitable for use in high-power systems requiring efficient switching capabilities.
FGH40T120SMD by Micross Components

FGH40T120SMD

Micross Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 80 A; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD;
APT100GN60B2G by Advanced Power Technology

APT100GN60B2G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSIP-T3; Maximum Collector-Emitter Voltage: 600 V;
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
FGH75T65SHDTLN4 by Onsemi

FGH75T65SHDTLN4

Onsemi

FGH75T65SHDTLN4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max power dissipation of 455W and a max operating temperature of 175°C.
IKW25N120H3 by Infineon Technologies

IKW25N120H3

Infineon Technologies

IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FS75R12KE3BOSA1 by Infineon Technologies

FS75R12KE3BOSA1

Infineon Technologies

FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
FP50R07N2E4B11BOSA1 by Infineon Technologies

FP50R07N2E4B11BOSA1

Infineon Technologies

FP50R07N2E4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 31 terminals, and a max IC of 70 A. It has a VCE of 650 V and toff of 265 ns. Ideal for power control applications due to its fast ton of 43 ns and UL approval.
IRG4BC40SPBF by International Rectifier

IRG4BC40SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
FS75R12KT3BOSA1 by Infineon Technologies

FS75R12KT3BOSA1

Infineon Technologies

Infineon FS75R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial systems like motor drives and renewable energy converters.
IRG4BC30W-SPBF by International Rectifier

IRG4BC30W-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
IXLF19N250A by IXYS Corporation

IXLF19N250A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
APT200GN60J by Advanced Power Technology

APT200GN60J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Nominal Turn Off Time (toff): 1210 ns; Transistor Element Material: SILICON;
AUIRGDC0250 by Infineon Technologies

AUIRGDC0250

Infineon Technologies

AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
IXXH50N60C3D1 by Littelfuse

IXXH50N60C3D1

Littelfuse

IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.
IRGP20B60PDPBF by Infineon Technologies

IRGP20B60PDPBF

Infineon Technologies

IRGP20B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 40A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 138ns and Max Power Dissipation of 220W.