Infineon Technologies - FF300R06ME3BOMA1

  1. Home
  2. Infineon Technologies - FF300R06ME3BOMA1
FF300R06ME3BOMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF300R06ME3BOMA1
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Nominal Turn On Time (ton): 190 ns; Transistor Application: POWER CONTROL;
Datasheet FF300R06ME3BOMA1 Datasheet
In Stock444
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 400 A
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 600 ns
No. of Terminals: 10
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 190 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
444 - -

Popular Products

Category Top Products

FF450R12KT4PHOSA1 by Infineon Technologies

FF450R12KT4PHOSA1

Infineon Technologies

FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.
IXGH16N170A by IXYS Corporation

IXGH16N170A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 16 A; Maximum Time At Peak Reflow Temperature (s): 10;
STGB20N45LZAG by STMicroelectronics

STGB20N45LZAG

STMicroelectronics

STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
F475R12KS4B11BOSA1 by Infineon Technologies

F475R12KS4B11BOSA1

Infineon Technologies

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
F3L15R12W2H3B27BOMA1 by Infineon Technologies

F3L15R12W2H3B27BOMA1

Infineon Technologies

Infineon's F3L15R12W2H3B27BOMA1 IGBT is N-CHANNEL with 12 elements, VCEsat of 2.4V, and toff of 355ns. Ideal for power control applications, it has a max VCE of 1200V, IC of 20A, and ton of 67ns. Operating from -40 to +150 °C, UL approved for reliability.
IXDP20N60BD1 by IXYS Corporation

IXDP20N60BD1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Additional Features: HIGH SPEED; Nominal Turn Off Time (toff): 315 ns;
IXGH10N170A by IXYS Corporation

IXGH10N170A

IXYS Corporation

IXGH10N170A by IXYS Corp is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 10A. It is commonly used in motor control applications due to its fast nominal turn-off time of 240ns.
MGD623S by Sanken Electric

MGD623S

Sanken Electric

The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
IRGP20B60PDPBF by Infineon Technologies

IRGP20B60PDPBF

Infineon Technologies

IRGP20B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 40A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 138ns and Max Power Dissipation of 220W.
VS-CPV364M4FPBF by Vishay Intertechnology

VS-CPV364M4FPBF

Vishay Intertechnology

VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.
FS215R04A1E3DBOMA1 by Infineon Technologies

FS215R04A1E3DBOMA1

Infineon Technologies

Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
IKW75N60T by Infineon Technologies

IKW75N60T

Infineon Technologies

IKW75N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a power dissipation of 428W and turn-off time of 401ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities.
APT65GP60JDQ2 by Microsemi

APT65GP60JDQ2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 431 W; Maximum Collector Current (IC): 130 A; No. of Elements: 1;
STGWA40M120DF3 by STMicroelectronics

STGWA40M120DF3

STMicroelectronics

STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
HGTG12N60A4D by Onsemi

HGTG12N60A4D

Onsemi

HGTG12N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 54A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode and fast switching times (toff:180ns, tf:95ns). Suitable for high-power systems operating in temperatures ranging from -55°C to 150°C.
IXGH100N30C3 by IXYS Corporation

IXGH100N30C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Case Connection: COLLECTOR; No. of Terminals: 3;
FS200R12KT4RPBPSA1 by Infineon Technologies

FS200R12KT4RPBPSA1

Infineon Technologies

Infineon's FS200R12KT4RPBPSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and silicon material composition.
7MBR150VR120-50 by Fuji Electric

7MBR150VR120-50

Fuji Electric

Fuji Electric's 7MBR150VR120-50 is an N-CHANNEL IGBT with 150A IC, 1200V VCE, and 885W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 390ns and low VCEsat of 2.95V, making it suitable for high-power systems requiring efficient switching capabilities.
FF150R12RT4HOSA1 by Infineon Technologies

FF150R12RT4HOSA1

Infineon Technologies

FF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 490 ns, and ton of 185 ns. It is used for POWER CONTROL applications, featuring a max Vce of 1200V and operating temperature of 175°C in a FLANGE MOUNT package.
RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.