Infineon Technologies - FF400R17KF6C_B2

  1. Home
  2. Infineon Technologies - FF400R17KF6C_B2
FF400R17KF6C_B2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF400R17KF6C_B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 3300 W; Maximum Collector Current (IC): 400 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet FF400R17KF6C_B2 Datasheet
In Stock826
NAME DESCRIPTION
Maximum Collector Current (IC): 400 A
Maximum Power Dissipation (Abs): 3300 W
Maximum Collector-Emitter Voltage: 1700 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 3.1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
826 - -

Popular Products

Category Top Products

APT65GP60JDQ2 by Advanced Power Technology

APT65GP60JDQ2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
FGD3040G2-F085C by Onsemi

FGD3040G2-F085C

Onsemi

Onsemi's FGD3040G2-F085C is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.25V, collector-emitter voltage of 450V, and can handle a max current of 41A. This surface-mount transistor has a package style of small outline and operates b/w -55 to 175 °C.
APT50GP60BG by Microchip Technology

APT50GP60BG

Microchip Technology

APT50GP60BG by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.
FP10R12W1T4B3BOMA1 by Infineon Technologies

FP10R12W1T4B3BOMA1

Infineon Technologies

Infineon Technologies' FP10R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCE of 1200V, IC of 20A, and toff of 500ns. Ideal for power control applications due to its built-in diode and thermistor, it offers fast ton at 108ns.
SKM100GB063D by Semikron International

SKM100GB063D

Semikron International

SKM100GB063D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.5V, Max IC of 130A, and can handle up to 450W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 335ns and high collector-emitter voltage of 600V.
HGTP10N120BN by Onsemi

HGTP10N120BN

Onsemi

The Onsemi HGTP10N120BN is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. Ideal for MOTOR CONTROL applications, it has a rise time of 15ns and can handle up to 35A collector current.
FF450R12ME3BOSA1 by Infineon Technologies

FF450R12ME3BOSA1

Infineon Technologies

FF450R12ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 600A, and turn-off time of 810ns. Ideal for applications requiring high power switching in industrial automation and renewable energy systems.
FS200R07N3E4RBOSA1 by Infineon Technologies

FS200R07N3E4RBOSA1

Infineon Technologies

FS200R07N3E4RBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 650V max collector-emitter voltage, and 210ns turn on time. It is used for power control applications due to its complex configuration and flange mount package style.
FP10R12W1T4PB11BPSA1 by Infineon Technologies

FP10R12W1T4PB11BPSA1

Infineon Technologies

Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
IKW75N65EL5XKSA1 by Infineon Technologies

IKW75N65EL5XKSA1

Infineon Technologies

IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
HGTG18N120BND by Harris Semiconductor

HGTG18N120BND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
HGTG40N60C3 by Fairchild Semiconductor

HGTG40N60C3

Fairchild Semiconductor

HGTG40N60C3 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 75A max collector current, and 291W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 460ns and high operating temperature of 150°C.
IRG4BC30U-SPBF by International Rectifier

IRG4BC30U-SPBF

International Rectifier

IRG4BC30U-SPBF by International Rectifier is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 23A max collector current. It has a power dissipation of 100W, turn-off time of 320ns, and operates at up to 150°C. Ideal for power control applications requiring fast switching speeds in surface-mount configurations.
IGW25N120H3FKSA1 by Infineon Technologies

IGW25N120H3FKSA1

Infineon Technologies

IGW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for POWER CONTROL applications due to its fast ton of 61ns and high operating temp of 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
HGTG18N120BND by Onsemi

HGTG18N120BND

Onsemi

HGTG18N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, suitable for motor control applications. It features a 22ns rise time, 200ns fall time, and 345ns turn off time. The transistor has a max power dissipation of 390W and can handle a collector current of up to 54A.
CM200DY-12NF by Mitsubishi Electric

CM200DY-12NF

Mitsubishi Electric

CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.
IRG4BC40SPBF by International Rectifier

IRG4BC40SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
FS50R12KE3 by Infineon Technologies

FS50R12KE3

Infineon Technologies

Infineon Technologies' FS50R12KE3 is a N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 1200V and power dissipation of 270W. Features built-in diode, thermistor, and fast turn-off time (toff) of 610ns for efficient performance.
IRG4BC40UPBF by Infineon Technologies

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
FGH30S130P by Onsemi

FGH30S130P

Onsemi

FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.