Infineon Technologies - FF450R08A03P2

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FF450R08A03P2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF450R08A03P2
Description N-Channel; Maximum Power Dissipation (Abs): 1667 W; Maximum Collector Current (IC): 900 A; Maximum VCEsat: 6.5 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Transistor Element Material: SILICON;
Datasheet FF450R08A03P2 Datasheet
In Stock193
NAME DESCRIPTION
Maximum Collector Current (IC): 900 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 690 ns
Maximum Power Dissipation (Abs): 1667 W
Maximum Collector-Emitter Voltage: 750 V
Nominal Turn On Time (ton): 430 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 6.5 V
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