Infineon Technologies - FF600R12IP4V

FF600R12IP4V by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12IP4V
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet FF600R12IP4V Datasheet
In Stock884
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1050 ns
No. of Terminals: 10
Maximum Power Dissipation (Abs): 3350 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 370 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.05 V
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Pricing (USD)

Qty. Unit Price Ext. Price
884 $449.310 $397,190.040

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