Infineon Technologies - FF600R12ME4CP_B11

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FF600R12ME4CP_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12ME4CP_B11
Description N-Channel; Maximum Power Dissipation (Abs): 4050 W; Maximum Collector Current (IC): 1060 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF600R12ME4CP_B11 Datasheet
In Stock475
NAME DESCRIPTION
Maximum Collector Current (IC): 1060 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 710 ns
Maximum Power Dissipation (Abs): 4050 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 300 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.1 V
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