Infineon Technologies - FF75R12RT4HOSA1

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FF75R12RT4HOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF75R12RT4HOSA1
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V; Transistor Application: POWER CONTROL;
Datasheet FF75R12RT4HOSA1 Datasheet
In Stock639
NAME DESCRIPTION
Other Names: FF75R12RT4
FF75R12RT4-ND
SP000624916
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 490 ns
No. of Terminals: 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 185 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
639 $74.410 $47,547.990

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