FF800R12KF4 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF800R12KF4
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5000 W; Maximum Collector Current (IC): 800 A; Terminal Position: UPPER;
Datasheet	FF800R12KF4 Datasheet
In Stock	969

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	800 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	1150 ns
No. of Terminals:	10
Maximum Power Dissipation (Abs):	5000 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	800 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X10
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	3.2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
969	-	-

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