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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FP10R06YE3_B4 |
| Description | Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 51.5 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | FP10R06YE3_B4 Datasheet |
| In Stock | 760 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 16 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 24 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 51.5 W |
| Maximum Collector-Emitter Voltage: | 600 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X24 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2 V |
