Infineon Technologies - FP10R12W1T7_B3

FP10R12W1T7_B3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP10R12W1T7_B3
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Maximum Gate-Emitter Threshold Voltage: 6.45 V; Maximum Operating Temperature: 175 Cel;
Datasheet FP10R12W1T7_B3 Datasheet
In Stock655
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 10 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 598 ns
No. of Terminals: 20
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 45 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X20
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: IEC-60747
Case Connection: ISOLATED
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