FS100R12KE3_B3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS100R12KE3_B3
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 480 W; Maximum Collector Current (IC): 140 A; Package Shape: RECTANGULAR;
Datasheet	FS100R12KE3_B3 Datasheet
In Stock	455

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	140 A
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
Nominal Turn Off Time (toff):	610 ns
No. of Terminals:	34
Maximum Power Dissipation (Abs):	480 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	340 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X34
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.15 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
455	-	-

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