Infineon Technologies - FS10R06VL4B2

FS10R06VL4B2 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS10R06VL4B2
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 78 W; Maximum Collector Current (IC): 16 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 1;
Datasheet	FS10R06VL4B2 Datasheet
In Stock	931

FS10R06VL4B2 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	16 A
Maximum Power Dissipation (Abs):	78 W
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.55 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
931	-	-

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