Infineon Technologies - FS150R12KE3P

  1. Home
  2. Infineon Technologies - FS150R12KE3P
FS150R12KE3P by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FS150R12KE3P
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Operating Temperature: 150 Cel; Terminal Form: UNSPECIFIED;
Datasheet FS150R12KE3P Datasheet
In Stock637
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 200 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 610 ns
No. of Terminals: 35
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 340 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X35
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
637 - -

Popular Products

Category Top Products

IRG4PH50SPBF by Infineon Technologies

IRG4PH50SPBF

Infineon Technologies

IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IRGP4063DPBF by Infineon Technologies

IRGP4063DPBF

Infineon Technologies

IRGP4063DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 96A. It is designed for POWER CONTROL applications, featuring a Max Power Dissipation of 330W and a Nominal Turn Off Time of 210ns. Ideal for high-power switching in various electronic systems.
IXDN55N120D1 by IXYS Corporation

IXDN55N120D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
FGH60N60SMD by Fairchild Semiconductor

FGH60N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Case Connection: COLLECTOR;
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
NVH680S75L4SPB by Onsemi

NVH680S75L4SPB

Onsemi

Insulated Gate Bipolar Transistors;
STGD20N45LZAG by STMicroelectronics

STGD20N45LZAG

STMicroelectronics

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
IRGB4061DPBF by International Rectifier

IRGB4061DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;
IKW30N65H5XKSA1 by Infineon Technologies

IKW30N65H5XKSA1

Infineon Technologies

IKW30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 55A. It has a toff of 246ns and ton of 31ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.
IRG4PC50SPBF by International Rectifier

IRG4PC50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V;
STGW45HF60WD by STMicroelectronics

STGW45HF60WD

STMicroelectronics

STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.
V23990-K230-F40-/1A/-PM by Vincotech

V23990-K230-F40-/1A/-PM

Vincotech

Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.
IXYP20N65C3D1 by Littelfuse

IXYP20N65C3D1

Littelfuse

IXYP20N65C3D1 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 50A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
IRG4BC30FDPBF by International Rectifier

IRG4BC30FDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;
IXXH30N60B3D1 by IXYS Corporation

IXXH30N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IRG4IBC20KDPBF by International Rectifier

IRG4IBC20KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel;
IRG4PC50KPBF by Infineon Technologies

IRG4PC50KPBF

Infineon Technologies

IRG4PC50KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max. collector-emitter voltage, 52A max. collector current, and 200W max. power dissipation. Ideal for power control applications due to its fast turn-off time of 430ns and high operating temperature of 150°C.
APT85GR120J by Microsemi

APT85GR120J

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Nominal Turn On Time (ton): 113 ns;
IRG4PC40UDPBF by International Rectifier

IRG4PC40UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Nominal Turn On Time (ton): 92 ns;
FGH40N60SFDTU_F085 by Onsemi

FGH40N60SFDTU_F085

Onsemi

FGH40N60SFDTU_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.