Infineon Technologies - FS200R06KE3

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FS200R06KE3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS200R06KE3
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 200 A; Terminal Position: UPPER;
Datasheet FS200R06KE3 Datasheet
In Stock660
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 200 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 450 ns
No. of Terminals: 35
Maximum Power Dissipation (Abs): 600 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 210 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X35
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 1.9 V
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Pricing (USD)

Qty. Unit Price Ext. Price
660 $196.060 $129,399.600

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