Infineon Technologies - FS200R07A02E3_S6

  1. Home
  2. Infineon Technologies - FS200R07A02E3_S6
FS200R07A02E3_S6 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FS200R07A02E3_S6
Description N-Channel; Maximum Power Dissipation (Abs): 694 W; Maximum Collector Current (IC): 400 A; Nominal Turn Off Time (toff): 570 ns; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
Datasheet FS200R07A02E3_S6 Datasheet
In Stock347
NAME DESCRIPTION
Maximum Collector Current (IC): 400 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 570 ns
Maximum Power Dissipation (Abs): 694 W
Maximum Collector-Emitter Voltage: 700 V
Nominal Turn On Time (ton): 220 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 6.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
347 - -

Popular Products

Category Top Products

STGB25N40LZAG by STMicroelectronics

STGB25N40LZAG

STMicroelectronics

STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
IXBX75N170 by Littelfuse

IXBX75N170

Littelfuse

IXBX75N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. Features include 840ns turn-off time and -55 to 150 °C operating temperature range.
ISL9V3040D3STV by Onsemi

ISL9V3040D3STV

Onsemi

ISL9V3040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.65 V and a max IC of 21 A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -55 to 175 °C, and has a peak reflow temperature of 260 C.
SGP10N60RUFDTU by Fairchild Semiconductor

SGP10N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
APT45GP120J by Advanced Power Technology

APT45GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
IXGH60N60C3D1 by IXYS Corporation

IXGH60N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
IXGH30N120B3D1 by Littelfuse

IXGH30N120B3D1

Littelfuse

IXGH30N120B3D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 300W power dissipation. Ideal for power control applications, it features a built-in diode, 380ns fall time, and -55 to 150°C operating temperature range.
IXGN50N120C3H1 by IXYS Corporation

IXGN50N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 95 A; Nominal Turn Off Time (toff): 485 ns;
NGTB40N120FL3WG by Onsemi

NGTB40N120FL3WG

Onsemi

NGTB40N120FL3WG by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 326ns and a max operating temperature of 175°C.
IXGH24N170 by Littelfuse

IXGH24N170

Littelfuse

IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.
FP25R12W1T7B11BPSA1 by Infineon Technologies

FP25R12W1T7B11BPSA1

Infineon Technologies

Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
FPF2C110BI07AS2 by Onsemi

FPF2C110BI07AS2

Onsemi

Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
IKW30N60TXK by Infineon Technologies

IKW30N60TXK

Infineon Technologies

IKW30N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 382ns and a turn-on time of 50ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
6PS18012E4FG35689NWSA1 by Infineon Technologies

6PS18012E4FG35689NWSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CM500HA-34A by Powerex

CM500HA-34A

Powerex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
FGH40N60SFDTU_F085 by Onsemi

FGH40N60SFDTU_F085

Onsemi

FGH40N60SFDTU_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.
APT100GN60B2G by Microchip Technology

APT100GN60B2G

Microchip Technology

Microchip Technology's APT100GN60B2G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it has a built-in diode, 435ns turn-off time, and 96ns turn-on time. Package style: IN-LINE, package shape: RECTANGULAR, terminal form: THROUGH-HOLE.
NGTB15N120FL2WG by Onsemi

NGTB15N120FL2WG

Onsemi

NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.