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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FS200R07A02E3S6BKSA2 |
| Description | N-Channel; Maximum Power Dissipation (Abs): 694 W; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 700 V; Nominal Turn Off Time (toff): 570 ns; Maximum VCEsat: 6.5 V; |
| Datasheet | FS200R07A02E3S6BKSA2 Datasheet |
| In Stock | 1,542 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
SP001661220 448-FS200R07A02E3S6BKSA2 |
| Maximum Collector Current (IC): | 400 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Polarity or Channel Type: | N-Channel |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 570 ns |
| Maximum Power Dissipation (Abs): | 694 W |
| Maximum Collector-Emitter Voltage: | 700 V |
| Nominal Turn On Time (ton): | 220 ns |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 6.5 V |







