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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FS200R07A5E3S6BPSA1 |
| Description | N-Channel; Maximum Power Dissipation (Abs): 630 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 440 ns; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; |
| Datasheet | FS200R07A5E3S6BPSA1 Datasheet |
| In Stock | 696 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
FS200R07A5E3S6BPSA1-ND 448-FS200R07A5E3S6BPSA1 SP001150884 |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Polarity or Channel Type: | N-Channel |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 440 ns |
| Maximum Power Dissipation (Abs): | 630 W |
| Maximum Collector-Emitter Voltage: | 705 V |
| Nominal Turn On Time (ton): | 200 ns |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 6.5 V |









