Infineon Technologies - FS200R10W3S7_B11

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FS200R10W3S7_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS200R10W3S7_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 130 A; No. of Elements: 6; Maximum Gate-Emitter Threshold Voltage: 5.85 V;
Datasheet FS200R10W3S7_B11 Datasheet
In Stock813
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 130 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.85 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 310 ns
No. of Terminals: 23
Maximum Collector-Emitter Voltage: 950 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 170 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X23
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: IEC-60747; IEC-60749; IEC-60068; IEC-61140
Case Connection: ISOLATED
Maximum VCEsat: 1.98 V
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