Infineon Technologies - FS35R12W1T7

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FS35R12W1T7 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS35R12W1T7
Description N-Channel; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.74 V; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.45 V; Nominal Turn On Time (ton): 82 ns;
Datasheet FS35R12W1T7 Datasheet
In Stock261
NAME DESCRIPTION
Nominal Turn Off Time (toff): 640 ns
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 82 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.74 V
Minimum Operating Temperature: -40 Cel
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