Infineon Technologies - FS75R12KT4B15BPSA1

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FS75R12KT4B15BPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS75R12KT4B15BPSA1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 28;
Datasheet FS75R12KT4B15BPSA1 Datasheet
In Stock104
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 75 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 490 ns
No. of Terminals: 28
Maximum Power Dissipation (Abs): 385 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 185 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X28
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Reference Standard: UL APPROVED
Case Connection: ISOLATED
Maximum VCEsat: 2.15 V
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Pricing (USD)

Qty. Unit Price Ext. Price
104 $107.000 $11,128.000

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