Infineon Technologies - FZ1200R12HE4PHPSA1

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FZ1200R12HE4PHPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R12HE4PHPSA1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1825 A; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
Datasheet FZ1200R12HE4PHPSA1 Datasheet
In Stock287
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1825 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 1130 ns
No. of Terminals: 7
Terminal Position: UPPER
Nominal Turn On Time (ton): 660 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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