Infineon Technologies - FZ1600R17HP4B21BOSA1

FZ1600R17HP4B21BOSA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FZ1600R17HP4B21BOSA1
Description	N-Channel; Maximum Power Dissipation (Abs): 13000 W; Maximum Operating Temperature: 150 Cel; Case Connection: ISOLATED; Maximum VCEsat: 2.25 V; Minimum Operating Temperature: -40 Cel;
Datasheet	FZ1600R17HP4B21BOSA1 Datasheet
In Stock	583

FZ1600R17HP4B21BOSA1 Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	1710 ns
Maximum Power Dissipation (Abs):	13000 W
Maximum Collector-Emitter Voltage:	1700 V
Nominal Turn On Time (ton):	690 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	2.25 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
583	-	-

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