Infineon Technologies - FZ2400R17KF6CB2NOSA1

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FZ2400R17KF6CB2NOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ2400R17KF6CB2NOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 18000 W; Maximum Collector Current (IC): 3800 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum VCEsat: 3.1 V; Nominal Turn Off Time (toff): 1690 ns;
Datasheet FZ2400R17KF6CB2NOSA1 Datasheet
In Stock841
NAME DESCRIPTION
Maximum Collector Current (IC): 3800 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1690 ns
Maximum Power Dissipation (Abs): 18000 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 530 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 3.1 V
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