Infineon Technologies - GA200SA60SP

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GA200SA60SP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number GA200SA60SP
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 630 W; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
Datasheet GA200SA60SP Datasheet
In Stock10,722
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 630 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
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