Infineon Technologies - IAUT150N10S5N035ATMA1

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IAUT150N10S5N035ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IAUT150N10S5N035ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Reference Standard: AEC-Q101; Maximum Drain Current (ID): 150 A;
Datasheet IAUT150N10S5N035ATMA1 Datasheet
In Stock8,490
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 150 A
Maximum Pulsed Drain Current (IDM): 600 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0035 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 210 mJ
Other Names: IAUT150N10S5N035
IAUT150N10S5N035ATMA1TR
IAUT150N10S5N035DKR
IAUT150N10S5N035TR
SP001416126
IFEINFIAUT150N10S5N035ATMA1
IAUT150N10S5N035CT
IAUT150N10S5N035ATMA1DKR
IAUT150N10S5N035ATMA1CT
2156-IAUT150N10S5N035ATMA1
IAUT150N10S5N035ATMA1-ND
IAUT150N10S5N035DKR-ND
IAUT150N10S5N035CT-ND
IAUT150N10S5N035TR-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Reference Standard: AEC-Q101
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