IAUT150N10S5N035ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IAUT150N10S5N035ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Reference Standard: AEC-Q101; Maximum Drain Current (ID): 150 A;
Datasheet	IAUT150N10S5N035ATMA1 Datasheet
In Stock	8,490

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	210 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	150 A
Maximum Pulsed Drain Current (IDM):	600 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	2
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0035 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
8,490	-	-

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