Infineon Technologies - IFS100B12N3E4_B40

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IFS100B12N3E4_B40 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IFS100B12N3E4_B40
Description N-Channel; Maximum Power Dissipation (Abs): 515 W; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel;
Datasheet IFS100B12N3E4_B40 Datasheet
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NAME DESCRIPTION
Nominal Turn Off Time (toff): 610 ns
Maximum Power Dissipation (Abs): 515 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 210 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.35 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.1 V
Minimum Operating Temperature: -40 Cel
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