Infineon Technologies - IFS100S12N3T4-B11

IFS100S12N3T4-B11 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IFS100S12N3T4-B11
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 2.1 V; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1;
Datasheet	IFS100S12N3T4-B11 Datasheet
In Stock	974

IFS100S12N3T4-B11 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	100 A
Maximum Power Dissipation (Abs):	455 W
Maximum Collector-Emitter Voltage:	1200 V
No. of Elements:	1
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
974	-	-

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