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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IFS75B12N3E4B31BOSA1 |
Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 185 ns; |
Datasheet | IFS75B12N3E4B31BOSA1 Datasheet |
In Stock | 756 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 570 ns |
No. of Terminals: | 34 |
Maximum Collector-Emitter Voltage: | 1200 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 185 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X34 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Reference Standard: | UL RECOGNIZED |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |