Infineon Technologies - IGC07R60DEX1SA1

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IGC07R60DEX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC07R60DEX1SA1
Description N-Channel; Maximum Gate-Emitter Threshold Voltage: 5.7 V; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
Datasheet IGC07R60DEX1SA1 Datasheet
In Stock699
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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