Infineon Technologies - IGC10T60QX1SA1

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IGC10T60QX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC10T60QX1SA1
Description N-Channel; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 5.6 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IGC10T60QX1SA1 Datasheet
In Stock958
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 600 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.6 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.32 V
Minimum Operating Temperature: -40 Cel
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