Infineon Technologies - IGC142T120T8RHX1SA2

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IGC142T120T8RHX1SA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC142T120T8RHX1SA2
Description N-Channel; Maximum VCEsat: 1.26 V; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
Datasheet IGC142T120T8RHX1SA2 Datasheet
In Stock754
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.26 V
Minimum Operating Temperature: -40 Cel
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