Infineon Technologies - IGC193T120T8RMX1SA2

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IGC193T120T8RMX1SA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC193T120T8RMX1SA2
Description N-Channel; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -40 Cel; Transistor Element Material: SILICON; Maximum VCEsat: 1.32 V;
Datasheet IGC193T120T8RMX1SA2 Datasheet
In Stock907
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.32 V
Minimum Operating Temperature: -40 Cel
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