IGC54T65R3QEX1SA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IGC54T65R3QEX1SA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V; Maximum VCEsat: 2.22 V;
Datasheet	IGC54T65R3QEX1SA1 Datasheet
In Stock	741

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.6 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	9
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N9
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.22 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
741	-	-

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