Infineon Technologies - IGC99T120T8RMX1SA3

  1. Home
  2. Infineon Technologies - IGC99T120T8RMX1SA3
IGC99T120T8RMX1SA3 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IGC99T120T8RMX1SA3
Description N-Channel; Maximum VCEsat: 1.97 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
Datasheet IGC99T120T8RMX1SA3 Datasheet
In Stock638
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.97 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
638 - -

Popular Products

Category Top Products

IKW25N120H3FKSA1 by Infineon Technologies

IKW25N120H3FKSA1

Infineon Technologies

IKW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
IRGR2B60KDTRLPBF by International Rectifier

IRGR2B60KDTRLPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
NGTB15N120FLWG by Onsemi

NGTB15N120FLWG

Onsemi

NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
FP10R12W1T4PB11BPSA1 by Infineon Technologies

FP10R12W1T4PB11BPSA1

Infineon Technologies

Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
IRG4PC50FD-EPBF by Infineon Technologies

IRG4PC50FD-EPBF

Infineon Technologies

IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.
2PS18012E44G40113NOSA1 by Infineon Technologies

2PS18012E44G40113NOSA1

Infineon Technologies

2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
2MBI200VA-060-50 by Fuji Electric

2MBI200VA-060-50

Fuji Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;
FPF2G120BF07ASP by Onsemi

FPF2G120BF07ASP

Onsemi

Onsemi's FPF2G120BF07ASP is an N-CHANNEL IGBT with 3 elements, diode, and thermistor. Ideal for power control applications with VCEsat of 2.2V, IC of 40A, and toff of 165ns. Operates at -40 to 150°C temperature range in a flange mount package style.
FGH40N65UFDTU_F085 by Onsemi

FGH40N65UFDTU_F085

Onsemi

FGH40N65UFDTU_F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 80A, and Pmax of 290W. Ideal for power control applications, it operates up to 150°C with a VCE max of 650V.
APT75GP120JDQ3 by Microchip Technology

APT75GP120JDQ3

Microchip Technology

APT75GP120JDQ3 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn off time of 360ns and a max operating temperature of 150°C.
IXYT25N250CHV by Littelfuse

IXYT25N250CHV

Littelfuse

Littelfuse IXYT25N250CHV is an N-CHANNEL IGBT with 2500V VCEsat, 95A IC, and 937W power dissipation. Ideal for power control applications, it has a turn-off time of 775ns and operates b/w -55 to 175°C. Suitable for surface mount with gull wing terminals in a rectangular package shape.
IHW30N160R5XKSA1 by Infineon Technologies

IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
IXDP20N60BD1 by Littelfuse

IXDP20N60BD1

Littelfuse

IXDP20N60BD1 by Littelfuse is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 32A max collector current, and 315ns nominal turn off time. Ideal for motor control applications due to its single configuration with built-in diode and rectangular package shape.
FF900R12IP4DVBOSA1 by Infineon Technologies

FF900R12IP4DVBOSA1

Infineon Technologies

FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
IRG4BC10SD-SPBF by Infineon Technologies

IRG4BC10SD-SPBF

Infineon Technologies

IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.
STGD20N45LZAG by STMicroelectronics

STGD20N45LZAG

STMicroelectronics

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
BSM75GB120DN2 by Siemens

BSM75GB120DN2

Siemens

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
FS50R12W2T4B11BOMA1 by Infineon Technologies

FS50R12W2T4B11BOMA1

Infineon Technologies

Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.