Infineon Technologies - IGP50N60THKSA1

  1. Home
  2. Infineon Technologies - IGP50N60THKSA1
IGP50N60THKSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IGP50N60THKSA1
Description N-Channel; Maximum Collector-Emitter Voltage: 600 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 328 ns;
Datasheet IGP50N60THKSA1 Datasheet
In Stock223
NAME DESCRIPTION
Nominal Turn Off Time (toff): 328 ns
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 55 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
223 - -

Popular Products

Category Top Products

FF1400R12IP4BOSA1 by Infineon Technologies

FF1400R12IP4BOSA1

Infineon Technologies

FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
FGH40N65UFDTU-F085 by Onsemi

FGH40N65UFDTU-F085

Onsemi

FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.
FZ250R65KE3NPSA1 by Infineon Technologies

FZ250R65KE3NPSA1

Infineon Technologies

Infineon's FZ250R65KE3NPSA1 IGBT offers 6500V VCE, 250A IC, and 4800W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
FS400R07A1E3S7BOMA1 by Infineon Technologies

FS400R07A1E3S7BOMA1

Infineon Technologies

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
IRG4BC20WPBF by International Rectifier

IRG4BC20WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Transistor Application: MOTOR CONTROL;
FGH40N60SMDF-F085 by Onsemi

FGH40N60SMDF-F085

Onsemi

FGH40N60SMDF-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.5V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 123ns, tf of 20ns, and can handle up to 349W power dissipation. Operating b/w -55°C to 175°C, it features a max VCE of 600V and gate-emitter voltage of 20V.
APT50GR120JD30 by Microsemi

APT50GR120JD30

Microsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
APT75GP120J by Advanced Power Technology

APT75GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
CM150TX-24S1 by Mitsubishi Electric

CM150TX-24S1

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
STGP5H60DF by STMicroelectronics

STGP5H60DF

STMicroelectronics

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
HGTG40N60B3 by Intersil

HGTG40N60B3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
IRG4PSH71KDPBF by International Rectifier

IRG4PSH71KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel;
IRG4BC30WPBF by Infineon Technologies

IRG4BC30WPBF

Infineon Technologies

IRG4BC30WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 100W. It has a Nominal Turn Off Time of 300ns, making it suitable for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities.
IRG4BC40UPBF by Infineon Technologies

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
IGP15N60TXKSA1 by Infineon Technologies

IGP15N60TXKSA1

Infineon Technologies

Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
IXGN200N170 by Littelfuse

IXGN200N170

Littelfuse

IXGN200N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCEsat, 280A IC, and 1250W power dissipation. Ideal for POWER CONTROL applications, it has a toff of 1040ns and ton of 183ns.
IKW40N65H5FKSA1 by Infineon Technologies

IKW40N65H5FKSA1

Infineon Technologies

IKW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 74A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.
STGW80V60DF by STMicroelectronics

STGW80V60DF

STMicroelectronics

STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
STGP15M120F3 by STMicroelectronics

STGP15M120F3

STMicroelectronics

STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
IRG4PC40UD-E by Infineon Technologies

IRG4PC40UD-E

Infineon Technologies

IRG4PC40UD-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 330ns and turn-on time of 92ns, this transistor is designed for flange mount installation.