Infineon Technologies - IHW30N65R6

IHW30N65R6 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IHW30N65R6
Description	N-Channel; Maximum Power Dissipation (Abs): 163 W; Maximum Collector Current (IC): 65 A; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 4.8 V; Nominal Turn Off Time (toff): 203 ns;
Datasheet	IHW30N65R6 Datasheet
In Stock	447

IHW30N65R6 Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	203 ns
Maximum Collector Current (IC):	65 A
Maximum Power Dissipation (Abs):	163 W
Maximum Collector-Emitter Voltage:	650 V
Nominal Turn On Time (ton):	24 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	4.8 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Polarity or Channel Type:	N-Channel

Pricing (USD)

Qty.	Unit Price	Ext. Price
447	-	-

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