Infineon Technologies - IHW40N120R5XKSA1

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IHW40N120R5XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW40N120R5XKSA1
Description N-Channel; Maximum Power Dissipation (Abs): 394 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.85 V;
Datasheet IHW40N120R5XKSA1 Datasheet
In Stock209
NAME DESCRIPTION
Maximum Collector Current (IC): 80 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 440 ns
Maximum Power Dissipation (Abs): 394 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.85 V
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Pricing (USD)

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209 $2.059 $430.331

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