Infineon Technologies - IHW50N65R6

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IHW50N65R6 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW50N65R6
Description N-Channel; Maximum Power Dissipation (Abs): 251 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Threshold Voltage: 4.8 V; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 307 ns;
Datasheet IHW50N65R6 Datasheet
In Stock579
NAME DESCRIPTION
Nominal Turn Off Time (toff): 307 ns
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 251 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 47 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
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