Infineon Technologies - IHW50N65R6

  1. Home
  2. Infineon Technologies - IHW50N65R6
IHW50N65R6 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IHW50N65R6
Description N-Channel; Maximum Power Dissipation (Abs): 251 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Threshold Voltage: 4.8 V; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 307 ns;
Datasheet IHW50N65R6 Datasheet
In Stock579
NAME DESCRIPTION
Nominal Turn Off Time (toff): 307 ns
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 251 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 47 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
579 - -

Popular Products

Category Top Products

SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.
APT70GR120J by Microchip Technology

APT70GR120J

Microchip Technology

Microchip Technology's APT70GR120J is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 112A max collector current. Ideal for motor control applications, it features a built-in diode, 394ns turn-off time, and 543W power dissipation capability.
FF400R12KE3B2HOSA1 by Infineon Technologies

FF400R12KE3B2HOSA1

Infineon Technologies

FF400R12KE3B2HOSA1 by Infineon is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.15V, and IC of 580A. Ideal for high-power applications requiring fast switching capabilities up to 125°C, it features a max VCE of 1200V and power dissipation of 2000W.
IGW08T120 by Infineon Technologies

IGW08T120

Infineon Technologies

IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
FS150R12KT3 by Infineon Technologies

FS150R12KT3

Infineon Technologies

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.
IKW75N60TAFKSA1 by Infineon Technologies

IKW75N60TAFKSA1

Infineon Technologies

IKW75N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, meeting AEC-Q101 standards.
IKW30N60H3 by Infineon Technologies

IKW30N60H3

Infineon Technologies

IKW30N60H3 by Infineon is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 262ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temp of 175°C in a RECTANGULAR package style.
IXYT25N250CHV by Littelfuse

IXYT25N250CHV

Littelfuse

Littelfuse IXYT25N250CHV is an N-CHANNEL IGBT with 2500V VCEsat, 95A IC, and 937W power dissipation. Ideal for power control applications, it has a turn-off time of 775ns and operates b/w -55 to 175°C. Suitable for surface mount with gull wing terminals in a rectangular package shape.
F4150R12KS4BOSA1 by Infineon Technologies

F4150R12KS4BOSA1

Infineon Technologies

F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.
IXGT6N170AHV by IXYS Corporation

IXGT6N170AHV

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): 10;
SKIIP13NAB065V1 by Semikron International

SKIIP13NAB065V1

Semikron International

Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
IRG7PH42U-EP by Infineon Technologies

IRG7PH42U-EP

Infineon Technologies

IRG7PH42U-EP by Infineon Technologies is an N-CHANNEL IGBT with tr of 41 ns, tf of 86 ns, and Abs of 385 W. It operates at a max temp of 175°C and has VCE of 1200V. With IC up to 90A, it's ideal for high-power applications like motor drives and inverters.
IKD10N60RATMA1 by Infineon Technologies

IKD10N60RATMA1

Infineon Technologies

IKD10N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 150W Ptot. It's used for power control applications due to its built-in diode, 428ns toff, and 24ns ton. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.
FS100R12KT4GBOSA1 by Infineon Technologies

FS100R12KT4GBOSA1

Infineon Technologies

FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.
SKM400GB12T4 by Semikron International

SKM400GB12T4

Semikron International

Semikron International's SKM400GB12T4 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.05V and Max Collector Current of 610A, it operates at up to 175°C. With a Max Collector-Emitter Voltage of 1200V, this UL RECOGNIZED transistor is designed for high-power systems.
F4-75R06W1E3 by Eupec & Kg

F4-75R06W1E3

Eupec & Kg

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Case Connection: ISOLATED;
FGD3040G2-F085V by Onsemi

FGD3040G2-F085V

Onsemi

FGD3040G2-F085V by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector current (IC) of 41A. It is commonly used for power control applications due to its high power dissipation of 150W and small outline package style.
FP40R12KE3BOSA1 by Infineon Technologies

FP40R12KE3BOSA1

Infineon Technologies

FP40R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 55A max collector current, and 610ns nominal turn off time. It is used for power control applications due to its complex configuration and silicon transistor element material. The package style is flange mount with a rectangular shape and wire terminals.
IXXX160N65B4 by Littelfuse

IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
FB10R06KL4GB1 by Infineon Technologies

FB10R06KL4GB1

Infineon Technologies

Infineon's FB10R06KL4GB1 is an N-CHANNEL IGBT with VCEsat of 2.55V, IC of 15A, and Pmax of 55W. Ideal for applications requiring high power dissipation in complex configurations at up to 150°C operating temperature.