Infineon Technologies - IKD06N60RC2

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IKD06N60RC2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD06N60RC2
Description N-Channel; Maximum Power Dissipation (Abs): 51.7 W; Maximum Collector Current (IC): 11.7 A; Maximum Collector-Emitter Voltage: 600 V; Minimum Operating Temperature: -40 Cel; Transistor Element Material: SILICON;
Datasheet IKD06N60RC2 Datasheet
In Stock60
NAME DESCRIPTION
Maximum Collector Current (IC): 11.7 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Polarity or Channel Type: N-Channel
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 159 ns
Maximum Power Dissipation (Abs): 51.7 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 17 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.3 V
Moisture Sensitivity Level (MSL): 1
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