Infineon Technologies - IKFW40N65DH5

  1. Home
  2. Infineon Technologies - IKFW40N65DH5
IKFW40N65DH5 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IKFW40N65DH5
Description N-Channel; Maximum Power Dissipation (Abs): 106 W; Maximum Collector Current (IC): 53 A; Maximum Operating Temperature: 175 Cel; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 142 ns;
Datasheet IKFW40N65DH5 Datasheet
In Stock742
NAME DESCRIPTION
Maximum Collector Current (IC): 53 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 142 ns
Maximum Power Dissipation (Abs): 106 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 46 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
742 - -

Popular Products

Category Top Products

IRG4PC50FDPBF by International Rectifier

IRG4PC50FDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
CM150TX-24S by Mitsubishi Electric

CM150TX-24S

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. Ideal for power control applications, it has a max VCEsat of 2.25V and can handle up to 150A collector current. With a max operating temperature of 150°C and UL recognition, it offers reliable performance in various industrial settings.
IRG4PC30UDPBF by Infineon Technologies

IRG4PC30UDPBF

Infineon Technologies

IRG4PC30UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 23A. It is designed for POWER CONTROL applications, featuring a single configuration with built-in diode and a package style of FLANGE MOUNT. Operating temperature ranges from -55 to 150 °C.
IHW15N120E1XKSA1 by Infineon Technologies

IHW15N120E1XKSA1

Infineon Technologies

IHW15N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Max Collector Current of 30A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 1450ns. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, making it suitable for various power control systems.
STGW30NC60WD by STMicroelectronics

STGW30NC60WD

STMicroelectronics

STGW30NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and a turn-off time of 189ns. The package style is flange mount with through-hole terminals.
IGA03N120H2XKSA1 by Infineon Technologies

IGA03N120H2XKSA1

Infineon Technologies

Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
DF150R12RT4HOSA1 by Infineon Technologies

DF150R12RT4HOSA1

Infineon Technologies

DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.
AOTF15B65M2 by Alpha & Omega Semiconductor

AOTF15B65M2

Alpha & Omega Semiconductor

AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.
IKD10N60RATMA1 by Infineon Technologies

IKD10N60RATMA1

Infineon Technologies

IKD10N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 150W Ptot. It's used for power control applications due to its built-in diode, 428ns toff, and 24ns ton. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.
HGTG18N120BND by Fairchild Semiconductor

HGTG18N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
FF900R12IP4VBOSA1 by Infineon Technologies

FF900R12IP4VBOSA1

Infineon Technologies

FF900R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 1300ns and a nominal turn-on time of 370ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and inverters.
APT50GP60BG by Microsemi

APT50GP60BG

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
FF400R12KE3HOSA1 by Infineon Technologies

FF400R12KE3HOSA1

Infineon Technologies

FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
FGH60N60SFDTU by Fairchild Semiconductor

FGH60N60SFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel;
APT150GN60JDQ4 by Advanced Power Technology

APT150GN60JDQ4

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
HGTG40N60B3 by Intersil

HGTG40N60B3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
AUIRG4PH50S by International Rectifier

AUIRG4PH50S

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Terminal Finish: MATTE TIN OVER NICKEL;
STGWA40H65DFB2 by STMicroelectronics

STGWA40H65DFB2

STMicroelectronics

STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
FGH40N60SFDTU by Onsemi

FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.
IKZ75N65EL5XKSA1 by Infineon Technologies

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.